Effect of doping of the intermediate layer on the RF performances of GaN-based p-i-n diodes

Key Points

• The aim is to investigate how varying the doping level in the intermediate layer affects the RF performance of GaN-based p-i-n diodes.
• Examined GaN-based p-i-n diodes with varying doping levels in the intermediate layer.
• Measured OFF-state capacitance and ON-state resistance.
• Evaluated cutoff frequency and DC characteristics under different biasing conditions.
• OFF-state capacitance reduced by 2.2 times with lower doping levels.
• ON-state resistance increased by only 16%.
• Cutoff frequency increased by 1.8 times, from 137 ± 5 GHz to 250 ± 16 GHz.
• No significant change in turn-on voltage and no breakdown at −200 V biasing.

Abstract