THz detectors based on CMOS technology have garnered widespread attention due to their potential in building compact, low-power, and scalable THz sensing and imaging systems. This paper proposes a 3.2 THz plasmonic wave detector fabricated in a standard 28 nm CMOS process, featuring an integrated on-chip antenna and NMOS transistor design. A response model was established, in which the NMOS input impedance at 3.2 THz extracted from the calibrated TCAD model was incorporated to evaluate the detector performance. At a modulation frequency of 2 kHz, the highest Rv of 830.1 V/W and the lowest NEP of 63.1 pW/Hz1/2 were obtained. The predicted results show good agreement with the experimental measurements, confirming the effectiveness of the TCAD-assisted response modeling approach. Furthermore, demonstration experiments such as concealed object detection and high-resolution biological sample imaging further confirm the practical value of this CMOS detector in compact THz sensing and imaging systems.
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Wenlong Li
Xi Zhang
Yongqiang Wang
Electronics
Tianjin University
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Li et al. (Wed,) studied this question.
www.synapsesocial.com/papers/69fd7f65bfa21ec5bbf07e32 — DOI: https://doi.org/10.3390/electronics15091958
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